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IPP60R600E6

600V CoolMOS E6 Power Transistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP60R600E6

N-Channel MOSFET Transistor

?DESCRIPTION ?ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdev

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPP60R600E6

Metal Oxide Semiconductor Field Effect Transistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IIPD60R600E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA60R600E6

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?DrainSourceVoltage- :VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplicatio

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPA60R600E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R600E6

MetalOxideSemiconductorFieldEffectTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPD60R600E6

N-ChannelMOSFETTransistor

?DESCRITION ?Fastswitching ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IPD60R600E6

600VCoolMOSE6PowerTransistor

Description CoolMOSisarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOSE6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theoffereddevi

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPP60R600E6

  • 功能描述：

    MOSFET N-CH 650V 7.3A

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
INFINEON/英飛凌
24+
TO220
8950
BOM配單專家,發(fā)貨快,價(jià)格低
 詢價(jià)
INFINEON/英飛凌
2021+
TO-220
16850
原裝進(jìn)口假一罰十
 詢價(jià)
INFINEON/英飛凌
24+
TO-220
13000
全新原裝現(xiàn)貨
 詢價(jià)
Infineon(英飛凌)
23+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
 詢價(jià)
INFINE0N
23+
TO-220-3
11846
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價(jià)
INFINEON
22+23+
TO-220
34602
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
INFINEON
1822+
TO-220
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
INFINEON
20+
TO-220
32500
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
 詢價(jià)
INFINEO
2020+
TO-220
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增
 詢價(jià)
Infineon
1931+
N/A
493
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 詢價(jià)
更多IPP60R600E6供應(yīng)商 更新時(shí)間2025-1-11 9:24:00

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