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IIPA037N08N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3.7m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IIPP037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA037N08N3

iscN-ChannelMOSFETTransistor

?DESCRITION ?Deviceforuseinawidevarietyofapplications ?FEATURES ?Lowdrain-sourceon-resistance:RDS(on)≤3.7m?(max) ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPA037N08N3G

OptiMOS(TM)3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPA037N08N3G

OptiMOS(TM)3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPB037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPI037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPI037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IPP037N08N3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IPP037N08N3G

OptiMOS3Power-Transistor

Features ?Idealforhighfrequencyswitchingandsync.rec. ?OptimizedtechnologyforDC/DCconverters ?ExcellentgatechargexRDS(on)product(FOM) ?Verylowon-resistanceRDS(on) ?N-channel,normallevel ?100avalanchetested ?Pb-freeplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

詳細(xì)參數(shù)

  • 型號(hào)：

    IPP037N08N3 G

  • 功能描述：

    MOSFET N-KANAL POWER MOS

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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INFINEON
23+
TO-TO-220
8000
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INFINEON
23+
TO-TO-220
8000
只做原裝現(xiàn)貨
 詢價(jià)
INFINEON
23+
TO-TO-220
7000
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INFINEON
24+
TO-TO-220
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
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INFINEON
2016+
TO-220
6000
公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票!
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INFINEON
24+
TO-220
5000
只做原裝公司現(xiàn)貨
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INFINEON
1708+
TO-220
8500
只做原裝進(jìn)口,假一罰十
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Infineon
24+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)
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INFINEON
23+
TO-262
11846
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英飛凌
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INF
50
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更多IPP037N08N3 G供應(yīng)商 更新時(shí)間2025-3-26 14:57:00

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