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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRF123	文件：68.22 Kbytes Page：7 Pages	8.0Aand9.2A,80Vand100V,0.27and0.36Ohm,N-Channel,PowerMOSFETs Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica	Intersil Intersil Corporation	Intersil
IRF123	文件：166.67 Kbytes Page：5 Pages	N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF123	文件：213.26 Kbytes Page：5 Pages	N-CHANNELPOWERMOSFETS FEATURES ?LowRDs	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRF123	文件：48.39 Kbytes Page：2 Pages	NanosecondSwitchingSpeeds	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRF123	文件：798.54 Kbytes Page：3 Pages	IRF120-123/IRF520-523MTP10N08/10N10N-ChannelPowerMOSFETs Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF123	文件：798.54 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF123	文件：798.54 Kbytes Page：3 Pages	N-ChannelPowerMOSFETs,11A,60-100V Description Thesedevicesaren-channel,enhancementmode,powerMOSFETsdesignedespeciallyforhighspeedapplications,suchasswitchingpowersupplies,converters,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulsecircuits. ?LowRDs	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
IRF123	文件：338.75 Kbytes Page：5 Pages	N-ChannelPowerMosfets,	ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED.	ARTSCHIP
IRFD123	文件：360.08 Kbytes Page：6 Pages	1.3Aand1.1A,80Vand100V,0.30and0.40Ohm,N-ChannelPowerMOSFETs Description TheseareadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregul	HARRIS Harris Corporation	HARRIS
IRFD123	文件：1.73655 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD123	文件：934.95 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Forautomaticinsertion ?Endstackable ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdg	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD123PBF	文件：1.73655 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching, ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?ForAutomaticInsertion	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFD123PBF	文件：934.95 Kbytes Page：9 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFF123	文件：165.85 Kbytes Page：5 Pages	N-ChannelEnhancement-ModePowerMOSField-EffectTransistors 5.0Aand6.0A,60V-100VrDS(0n)=0.30Ωand0.40Ω Features: ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice	GESS GE Solid State	GESS
ISCNH123L	文件：305.19 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
J123F	文件：130.83 Kbytes Page：2 Pages	ULFclassratedstandard	CIT CIT Relay & Switch	CIT
JMTL123K	文件：183.585 Kbytes Page：4 Pages		JJWJieJie Microelectronics Co., Ltd. 捷捷微江蘇捷捷微電子股份有限公司 PDF上傳者：深圳市溢航科技有限公司	JJW
JT-123-SLCF	文件：189.7 Kbytes Page：2 Pages	LINEOUTPUTTRANSFORMER	ETC1List of Unclassifed Manufacturers etc未分類(lèi)制造商未分類(lèi)制造商	ETC1
K123LA	文件：457.28 Kbytes Page：2 Pages	Safetyandsecuritysystems	Ultralife Ultralife Corporation.	Ultralife
KDS123E	文件：442.17 Kbytes Page：3 Pages	SILICONEPITAXIALPLANARDIODE ULTRAHIGHSPEEDSWITCHINGAPPLICATION. FEATURES ?LowForwardVoltage ?FastReverseRecoveryTime ?SmallTotalCapacitance ?Ultra-SmallSurfaceMountPackage ?SuffixU:QualifiedtoAEC-101 ex)KDS123E-RTK/HU	KECKEC CORPORATION KEC株式會(huì)社	KEC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市博浩通科技有限公司	IR123H	IR	23+	SOP	1003	全新原裝現(xiàn)貨	詢(xún)價(jià)
深圳市河鋒鑫科技有限公司	IR123H	IR	22+	SOP	6000	終端可免費(fèi)供樣,支持BOM配單	詢(xún)價(jià)
深圳市創(chuàng)新跡電子有限公司	IR123H	IR	23+	SOP	8000	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢(xún)價(jià)
深圳市安富世紀(jì)電子有限公司	IR123H	IR	23+	SOP	8000	專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨	詢(xún)價(jià)
天津市博通航睿技術(shù)有限公司	IR123H	IR	23+	SOP	7000		詢(xún)價(jià)
深圳市一線半導(dǎo)體有限公司	IR123M	IR	24+	TO263-4.5	1000		詢(xún)價(jià)
深圳市興燦科技有限公司	IR123M	IR	24+	TO263-4.5	2000	全新進(jìn)口原裝現(xiàn)貨熱賣(mài)!	詢(xún)價(jià)
深圳市宏世佳電子科技有限公司	IR123M	IOR	2023+	TO263	3645	全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷(xiāo)售	詢(xún)價(jià)
兆億微波(北京)科技有限公司	IR-12-458	Pulsar			99		詢(xún)價(jià)
深圳市能元時(shí)代電子有限公司	IR124H	IR	23+		21564	##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢(xún)價(jià)

更多IR123H供應(yīng)商更新時(shí)間2025-1-12 14:02:00

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