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IRF3315

PowerMOSFET(Vdss=150V,Rds(on)=0.07ohm,Id=27A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315

N-ChannelMOSFETTransistor

?DESCRITION ?Combinewiththefastswitchingspeedandruggedizeddevicedesign ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤70m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3315L

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-262package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3315L

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315LPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRF3315LPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF3315PBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRF3315S

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTo-263(D2PAK)package ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3315S

PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IR3315STRLPBF

  • 功能描述：

    電源開關 IC - 配電 AUTO PRGM CURRENT SENSE HI SIDE SWITCH

  • RoHS：

    否

  • 制造商：

    Exar

  • 輸出端數(shù)量：

    1

  • 開啟電阻（最大值）：

    85 mOhms

  • 開啟時間（最大值）：

    400 us

  • 關閉時間（最大值）：

    20 us

  • 工作電源電壓：

    3.2 V to 6.5 V

  • 最大工作溫度：

    + 85 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    SOT-23-5

供應商型號品牌批號封裝庫存備注價格
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
IR
22+
NA
30000
原裝現(xiàn)貨假一罰十
 詢價
IRVISHAY
22+
NA
35000
全新原裝正品現(xiàn)貨
 詢價
IR
22+
IC SW PROGR CURR SENS D2PAK-5
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
IC SW PROGR CURR SENS D2PAK-5
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
IC SW PROGR CURR SENS D2PAK-5
7000
詢價
IR
23+
TO-263
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
IR
2023+
TO-263
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
 詢價
IR
24+
TO-263
35200
一級代理/放心采購
 詢價
IR
14+PBF
TO-263
7000
現(xiàn)貨
 詢價
更多IR3315STRLPBF供應商 更新時間2025-2-15 9:50:00

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