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IRF540NSTRLPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NSTRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF540NSTRR

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NSTRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540PBF

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF540PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540S

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF540S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540S

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

IRF540S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540S

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=77mΩ(Max)@VGS=10V APPLICATIONS ·DC-DCConverters ·AutomaticTestEquipment ·High-SideSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540SPBF

HEXFET?PowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovid

IRF

International Rectifier

IRF540SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540STRLPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540STRLPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540STRRPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540STRRPBFA

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540Z

AUTOMOTIVEMOSFET

VDSS=100V RDS(on)=26.5m? ID=36A Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingte

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF-540NSPBF

  • 制造商：

    International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR進(jìn)口原
23+
TO-263
8650
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
 詢價(jià)
IR
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
TO-220
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
 詢價(jià)
IR
22+
NEW
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
NA/
3750
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票
 詢價(jià)
IR
23+
NEW
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
NEW
7000
詢價(jià)
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
2022
TO-220
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
IR
23+
D2-PAK
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
 詢價(jià)
更多IRF-540NSPBF供應(yīng)商 更新時(shí)間2024-10-25 14:49:00

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