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IRF1018ESLPBF

HEXFET Power MOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESLPBF

High Efficiency Synchronous Rectification in SMPS

IRF

International Rectifier

IRF1018ESPBF

HEXFETPowerMOSFET

Benefits ●ImprovedGate,AvalancheandDynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheSOA ●EnhancedbodydiodedV/dtanddI/dtCapability Applications ●HighEfficiencySynchronousRectificationinSMPS ●UninterruptiblePowerSupply ●HighSpeedPowerSwitching

IRF

International Rectifier

IRF1018ESPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018E

N-ChannelMOSFETTransistor

?DESCRITION ?HighSpeedPowerSwitching ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤8.4m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

IRF

International Rectifier

IRFR1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFR1018ETRPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU1018EPBF

HEXFETTMPowerMOSFET

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

IRFU1018EPBF

HighEfficiencySynchronousRectificationinSMPS

Benefits ?ImprovedGate,AvalancheandDynamicdv/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheSOA ?EnhancedbodydiodedV/dtanddI/dtCapability Applications ?HighEfficiencySynchronousRectificationinSMPS ?UninterruptiblePowerSupply ?HighSpeedPowerSwitching

IRF

International Rectifier

ISF1018

iscN-ChannelMOSFETTransistor

FEATURES ·Lowdrain-sourceon-resistance :RDS(ON)=0.073Ω(typ.) ·EasytocontrolGateswitching ·Enhancementmode :Vth=2.7to3.7V(VDS=10V,ID=1.5mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRITION ·Switching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

KIT1018S

PhotoInterrupter

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

KT1018TLD

4PINLSOPPHOTOTRANSISTORPHOTOCOUPLER

COSMO

COSMO Electronics Corporation

KT1018TRU

4PINLSOPPHOTOTRANSISTORPHOTOCOUPLER

COSMO

COSMO Electronics Corporation

LD1018

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LD1018SP

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LD1018SS

16ChannelConstantCurrentLEDDriver

LDT

LDT Co., Ltd

LT1018

MicropowerDualComparator

LINERLinear Technology

凌力爾特凌特半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF1018ESLPBF

  • 功能描述：

    MOSFET 60V 1 N-CH HEXFET 8.4mOhms 46nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
24+
TO-262
625
詢價
IR
23+
TO-262
7750
全新原裝優(yōu)勢
 詢價
IR
2016+
TO-262
12600
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
Infineon
18+
NA
3897
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-262-3
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
INTREC
23+
NA
2276
專做原裝正品,假一罰百!
 詢價
IR
23+
TO-262
5000
原裝正品現(xiàn)貨
 詢價
IR/VISHAY
20+
D2-PAK
36900
原裝優(yōu)勢主營型號-可開原型號增稅票
 詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
 詢價
更多IRF1018ESLPBF供應(yīng)商 更新時間2024-10-25 11:18:00

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