首頁 >IRF1404STRRPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET ■Features ●VDS(V)=40V ●ID=75A(VGS=10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea. Features AdvancedProcessTechnology UltraLowOn-Resistance 175°COperatingTemperature | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description ThisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescombi | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology | IRF International Rectifier | IRF | ||
AUTOMOTIVEMOSFETAdvancedProcessTechnology Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC |
詳細(xì)參數(shù)
- 型號:
IRF1404STRRPBF
- 功能描述:
MOSFET 40V 1 N-CH HEXFET 4mOhms 160nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
D2PAK |
8357 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價(jià) | ||
IR |
24+ |
TO-263 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO-263 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價(jià) | ||
IR |
19+ |
TO-263 |
32000 |
原裝正品,現(xiàn)貨特價(jià) |
詢價(jià) | ||
International Rectifier |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%進(jìn)口原裝!長期供應(yīng)!絕對優(yōu)勢價(jià)格(誠信經(jīng)營)! |
詢價(jià) | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
Infineon(英飛凌) |
2112+ |
D2PAK |
115000 |
800個(gè)/卷一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價(jià) | ||
INFINEON |
1809+ |
TO-263 |
1675 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
D2PAK |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) |
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