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IRF3205SPBF規(guī)格書詳情
VDSS= 55V
RDS(on)= 8.0m?
ID= 110A
Description
Advanced HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF3205SPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 8mOhms 97.3nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
16383 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
25+ |
TO263 |
54648 |
百分百原裝現(xiàn)貨 實單必成 歡迎詢價 |
詢價 | ||
IR |
2018+ |
TO263 |
6528 |
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫存放心 |
詢價 | ||
IR |
2021+ |
TO-263 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IR |
25+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
TO252 |
23+ |
NA |
15659 |
振宏微專業(yè)只做正品,假一罰百! |
詢價 | ||
IR |
24+ |
N/A |
8000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
IR |
2023+ |
TO263 |
8635 |
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
INFINEON/英飛凌 |
2022+ |
5000 |
只做原裝,價格優(yōu)惠,長期供貨。 |
詢價 |
