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IRF540NSTRPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF540NSTRR

AdvancedProcessTechnology

IRF

International Rectifier

IRF540NSTRRPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF540PBF

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissi

IRF

International Rectifier

IRF540PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRated

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipation

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540S

N-channelTrenchMOStransistor

VDSS=100V ID=23A RDS(ON)≤77m? GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Lowthermalresistance Applications:- ?d.c.t

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

IRF540S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF540S

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFETS ?175°CJunctionTemperature ?LowThermalResistancePackage

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRF540S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatas

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRF540NSTRLPBF-CUT TAPE

  • 制造商：

    IR

  • 功能描述：

    Single N-Channel 100 V 130 W 71 nC Hexfet Power Mosfet Surface Mount - D2PAK-3

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
INFINEON/英飛凌
2023+
TO-263
5000
AI智能識別、工業(yè)、汽車、醫(yī)療方案LPC批量及配套一站
 詢價(jià)
INFINEON/英飛凌
21+
TO-263
5000
原裝現(xiàn)貨假一賠十
 詢價(jià)
IR
21+
TO-263
8000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
INFINEON/英飛凌
21+
TO-263
800
只做原裝正品
 詢價(jià)
INFINEON/英飛凌
24+
TO-263
800
只做原裝，歡迎詢價(jià)，量大價(jià)優(yōu)
 詢價(jià)
IR
24+
TO-263
39197
鄭重承諾只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
IR
24+
TO-263
60000
詢價(jià)
IR
23+
TO263
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
IR
19+
252
74565
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價(jià)
更多IRF540NSTRLPBF-CUT TAPE供應(yīng)商 更新時(shí)間2025-5-24 11:00:00

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