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IRF614

2.0A, 250V, 2.0 Ohm, N-Channel Power MOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch

Intersil

Intersil Corporation

IRF614

Ease of Paralleling

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導體

IRF614

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF614

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF614_V01

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技威世科技半導體

IRF614A

N-Channel Mosfet Transistor

?DESCRITION ?Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. ?FEATURES ?LowRDS(on) ?VGSRatedat±30V ?SiliconGateforFastSwitchingSpeed ?Rugged ?LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF614B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF614PBF

hexfet power mosfet

HEXFETPowerMOSFET ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?FastSwitching ?SurfaceMount ?EaseofParalleling ?SimpleDriveRequirements ?Lead-Free

IRF

International Rectifier

IRF614S

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

IRF614S_V01

Power MOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?Dynamicdv/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatashee

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRF614

  • 功能描述:

    MOSFET N-Chan 250V 2.7 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商型號品牌批號封裝庫存備注價格
仙童
06+
TO-220
5000
原裝
詢價
IR
2016+
TO220
3000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
詢價
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
詢價
IR
24+
原廠封裝
1450
原裝現(xiàn)貨假一罰十
詢價
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫存,長期供應
詢價
IR
24+/25+
445
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
23+
TO
5000
原裝正品,假一罰十
詢價
IR
23+
TO-220
35890
詢價
IOR
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價
IR
23+
TO-220
9888
專做原裝正品,假一罰百!
詢價
更多IRF614供應商 更新時間2025-4-16 16:27:00