IRF634S分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個規(guī)格書PDF中文資料

IRF634S屬于分立半導(dǎo)體產(chǎn)品的晶體管-FETMOSFET-單個。由威世科技半導(dǎo)體制造生產(chǎn)的IRF634S晶體管 - FET，MOSFET - 單個分立式場效應(yīng)晶體管 (FET) 廣泛用于功率轉(zhuǎn)換、電機控制、固態(tài)照明及其他應(yīng)用，它們具有高頻開關(guān)特性，同時又能承載大電流，使其在這些應(yīng)用中具備一定優(yōu)勢。這類晶體管廣泛應(yīng)用于要求額定電壓為幾百伏或更低的應(yīng)用，如果超出該額定電壓值，則 IGBT 等其他器件更具競爭力。

FEATURES

? Surface-mount

? Available in tape and reel

? Dynamic dv/dt rating

? Repetitive avalanche rated

? Fast switching

? Ease of paralleling

? Simple drive requirements

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note?

* This datasheet provides information about parts that are?

RoHS-compliant and / or parts that are non RoHS-compliant. For?

example, parts with lead (Pb) terminations are not RoHS-compliant.?

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D2PAK (TO-263) is a surface-mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D2PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface-mount application.