首頁>IRF640NLPBF>規(guī)格書詳情
IRF640NLPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRF640NLPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF640NLPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
78000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
IR |
24+ |
TO-262 |
500 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
Infineon(英飛凌) |
2112+ |
TO262 |
115000 |
1000個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長 |
詢價 | ||
IR |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
IR |
23+ |
TO220 |
55022 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
22+ |
TO220 |
2000 |
原廠原包裝。假一罰十?？砷_13%增值稅發(fā)票。 |
詢價 | ||
IR |
24+ |
TO-262-3 |
271 |
詢價 | |||
Infineon/英飛凌 |
23+ |
TO262 |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon Technologies |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
TO2623 Long Leads I2Pak TO262A |
13880 |
公司只售原裝,支持實單 |
詢價 |
