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IRF640NPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NPBF

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NS

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640NS

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640NS

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640NS

AdvancedProcessTechnology

IRF

International Rectifier

IRF640NS

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

IRF640NSPBF

HEXFET?PowerMOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO220
16850
原裝現(xiàn)貨/15年行業(yè)經(jīng)驗(yàn)歡迎詢(xún)價(jià)
 詢(xún)價(jià)
IR
21+
TO220
13880
公司只售原裝,支持實(shí)單
 詢(xún)價(jià)
IR
22+
TO220
8900
英瑞芯只做原裝正品!!!
 詢(xún)價(jià)
IR
22+
TO220
6000
終端可免費(fèi)供樣,支持BOM配單
 詢(xún)價(jià)
INFINEON/英飛凌
23+
TO-220
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
 詢(xún)價(jià)
IR
19+
TO220
880000
明嘉萊只做原裝正品現(xiàn)貨
 詢(xún)價(jià)
IR
23+
TO220
8000
只做原裝現(xiàn)貨
 詢(xún)價(jià)
IR
24+
TO220
7671
原裝正品.優(yōu)勢(shì)專(zhuān)營(yíng)
 詢(xún)價(jià)
IR
23+
TO220
7000
詢(xún)價(jià)
IR
2310+
TO220
3699
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
 詢(xún)價(jià)
更多IRF640NPBD供應(yīng)商 更新時(shí)間2025-1-28 13:36:00

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