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IRF640NPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書

廠商型號 |
IRF640NPBF |
功能描述 | Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature |
文件大小 |
8.24278 Mbytes |
頁面數(shù)量 |
11 頁 |
生產(chǎn)廠商 | Kersemi Electronic Co., Ltd. |
企業(yè)簡稱 |
KERSEMI |
中文名稱 | Kersemi Electronic Co., Ltd.官網(wǎng) |
原廠標(biāo)識 | ![]() |
數(shù)據(jù)手冊 | |
更新時間 | 2025-3-30 9:14:00 |
人工找貨 | IRF640NPBF價格和庫存,歡迎聯(lián)系客服免費人工找貨 |
IRF640NPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號:
IRF640NPBF
- 功能描述:
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR/國際整流器 |
2410+ |
TO-220 |
1005 |
原裝正品.假一賠百.正規(guī)渠道.原廠追溯. |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO220 |
41316 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
INFINEON |
21+ |
TO-220 |
30000 |
原裝現(xiàn)貨、工廠庫存 |
詢價 | ||
IR |
23+ |
NA |
2860 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
INFINEON |
22+23+ |
TO-220 |
8000 |
新到現(xiàn)貨,只做原裝進口 |
詢價 | ||
IR |
23+ |
TO-220 |
59418 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
INFINEON |
24+ |
TO-220 |
12800 |
只做現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO220 |
9000 |
原裝正品 |
詢價 | ||
INFINEON/英飛凌 |
21+ |
NA |
9990 |
只有原裝 |
詢價 | ||
INFINEON |
23+ |
TO-220 |
6000 |
全新原裝現(xiàn)貨、誠信經(jīng)營! |
詢價 |