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IRF640NPBF中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF640NPBF規(guī)格書詳情
Description
Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
● Advanced Process Technology
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Ease of Paralleling
● Simple Drive Requirements
● Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRF640NPBF
- 功能描述：
MOSFET MOSFT 200V 18A 150mOhm 44.7nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INFINEON/IR |
1907+ |
NA |
4750 |
20年老字號(hào),原裝優(yōu)勢長期供貨 |
詢價(jià) | ||
23+ |
TO-220 |
20000 |
原廠原裝正品現(xiàn)貨 |
詢價(jià) | |||
JSMSEMI(杰盛微) |
23+ |
TO220 |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價(jià) | ||
INFINEON/英飛凌 |
21+ |
TO-220 |
20004 |
詢價(jià) | |||
INFINEON |
23+ |
TO-220 |
10000 |
全新、原裝 |
詢價(jià) | ||
IR |
23+ |
TO-220 |
65 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO-220 |
918000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
Infineon(英飛凌) |
23+ |
TO220 |
41316 |
正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊 |
詢價(jià) | ||
INTERNATIONA |
23+ |
TO220 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
Infineon/英飛凌 |
21+ |
TO-220(TO-220-3) |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) |
