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IRF6637TRPBF規(guī)格書詳情
Description
The IRF6637PbF combines the latest HEXFET? power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHS Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses and Switching Losses
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號：
IRF6637TRPBF
- 功能描述：
MOSFET 30V 1 N-CH HEXFET 7.7mOhms 11nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
MG-WDSON-5 |
11177 |
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。 |
詢價 | ||
IR |
2402+ |
DIRECTFETMP |
8324 |
原裝正品!實單價優(yōu)! |
詢價 | ||
IR |
22+ |
QFN |
9000 |
原裝正品 |
詢價 | ||
IR |
24+ |
QFN |
65300 |
一級代理/放心購買! |
詢價 | ||
IR |
DirectFET |
68900 |
原包原標簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
Infineon/英飛凌 |
21+ |
MG-WDSON-5 |
6820 |
只做原裝,質(zhì)量保證 |
詢價 | ||
IR |
2022+ |
DirectFET |
8600 |
英瑞芯只做原裝正品 |
詢價 | ||
IR |
22+ |
QFN |
8000 |
原裝正品支持實單 |
詢價 | ||
Infineon(英飛凌) |
2117+ |
MG-WDSON-5 |
315000 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
7000 |
詢價 |
