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IRF6691TR1PBF規(guī)格書詳情
Description
The IRF6691PbF combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80.
● RoHs Compliant
● Lead-Free (Qualified up to 260°C Reflow)
● Application Specific MOSFETs
● Ideal for CPU Core DC-DC Converters
● Low Conduction Losses
● High Cdv/dt Immunity
● Low Profile (<0.7mm)
● Dual Sided Cooling Compatible
● Compatible with existing Surface Mount Techniques
產(chǎn)品屬性
- 型號(hào)：
IRF6691TR1PBF
- 功能描述：
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
419 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價(jià) | ||
IR |
23+ |
QFN |
90000 |
一定原裝正品 |
詢價(jià) | ||
IR |
QFN |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價(jià) | |||
IR |
22+ |
QFN |
8000 |
原裝正品支持實(shí)單 |
詢價(jià) | ||
IOR |
23+ |
DIRECTFE |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
24+ |
DirectFETtradeIso |
7500 |
詢價(jià) | |||
IR |
2019+ |
QFN |
36000 |
原盒原包裝 可BOM配套 |
詢價(jià) | ||
只做原裝 |
24+ |
QFN |
36520 |
一級(jí)代理/放心采購 |
詢價(jià) | ||
IR |
17+ |
DIRECTFET |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
IOR |
21+ |
QFN/Dir |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) |
