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IRF7101

HEXFET Power MOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7101PBF

HEXFET? Power MOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7101TRPBF

Adavanced Process Technology

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7102

HEXFET? Power MOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvanced processingtechniquestoachievethelowestpossibleon-resistancepersilicon area.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevice designthatHEXFETPowerMOSFETsarewellknownfo

IRF

International Rectifier

IRF7103

Power MOSFET(Vdss=50V, Rds(on)=0.130ohm, Id=3.0A)

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRF7103PBF

HEXFET Power MOSFET

Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The

IRF

International Rectifier

IRF7103Q

Power MOSFET(Vdss=50V)

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFETsinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMO

IRF

International Rectifier

IRF7103TR

Marking:IRF7103;Package:SOP-8;Dual N-Channel MOSFET

Features *VDs(v=50V *RDpsON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

IRF7103TRPBF

adavanced process technology

Description TheSO-8hasbeenmodifiedthroughacustomizedleadframeforenhancedthermalcharacteristicsanddual-diecapabilitymakingitidealinavarietyofpowerapplications.Withtheseimprovements,multipledevicescanbeusedinanapplicationwithdramaticallyreducedboardspace.The

IRF

International Rectifier

IRF7104

HEXFET Power MOSFET

Description FourthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRF710

  • 功能描述:

    MOSFET N-Chan 400V 2.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2015+
TO-220
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣(mài)!
詢價(jià)
IR
24+/25+
26
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu)
詢價(jià)
IR
23+
TO-220
19526
詢價(jià)
IR
2020+
TO-220
22
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
詢價(jià)
IR
06+
TO-220
8000
原裝庫(kù)存
詢價(jià)
IR
15+
TO-220
11560
全新原裝,現(xiàn)貨庫(kù)存,長(zhǎng)期供應(yīng)
詢價(jià)
SEC
23+
34-PCM
5000
原裝正品,假一罰十
詢價(jià)
VISHAY/IR
24+
原廠封裝
550
原裝現(xiàn)貨假一罰十
詢價(jià)
IOR
23+
TO-
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
詢價(jià)
IR
24+
原裝
6980
原裝現(xiàn)貨,可開(kāi)13%稅票
詢價(jià)
更多IRF710供應(yīng)商 更新時(shí)間2025-3-31 17:40:00