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IRF7105中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRF7105
廠商型號(hào)

IRF7105

功能描述

HEXFET POWER MOSFET

文件大小

271.1 Kbytes

頁(yè)面數(shù)量

10 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-11 11:53:00

IRF7105規(guī)格書詳情

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

● Adavanced Process Technology

● Ultra Low On-Resistance

● Dual N and P Channel Mosfet

● Surface Mount

● Available in Tape & Reel

● Dynamic dv/dt Rating

● Fast Switching

產(chǎn)品屬性

  • 型號(hào):

    IRF7105

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC

  • 功能描述:

    MOSFET DUAL NP LOGIC SO-8

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