IRF830中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
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更多IRF830規(guī)格書(shū)詳情
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Features
? 4.5A, 500V
?rDS(ON)= 1.500?
? Single Pulse Avalanche Energy Rated
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
IRF830
- 功能描述:
MOSFET N-Chan 500V 4.5 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220AB |
16800 |
絕對(duì)原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢(shì)!? |
詢價(jià) | ||
IR |
23+ |
NA/ |
286 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
IR |
18+ |
MODULE |
1290 |
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126 |
詢價(jià) | ||
HAR |
23+ |
原廠封裝 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
IOR |
23+ |
TO220 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
IR |
87 |
公司優(yōu)勢(shì)庫(kù)存 熱賣(mài)中!! |
詢價(jià) | ||||
CJ/長(zhǎng)電 |
22+ |
TO-220-3L |
55587 |
原裝正品現(xiàn)貨,可開(kāi)13點(diǎn)稅 |
詢價(jià) | ||
ST |
22+ |
TO-220 |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價(jià) | ||
IR |
23+ |
TO-220 |
10065 |
原裝正品,有掛有貨,假一賠十 |
詢價(jià) | ||
VISHAY |
新 |
7500 |
全新原裝 貨期兩周 |
詢價(jià) |
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