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IRF9610PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheTO-220p

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610PBF

HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.8A)

IRF

International Rectifier

IRF9610S

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.8A)

Description TheHEXFETtechnologyisthekeytointernationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. ?Surface

IRF

International Rectifier

IRF9610S

AvailableinTapeandReel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprov

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610S

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610SPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610STRLPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導體

IRF9610STRRPBF

PowerMOSFET

FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?P-channel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinforma

VishayVishay Siliconix

威世科技威世科技半導體

IRFI9610G

PowerMOSFET

FEATURES ?Isolatedpackage ?Highvoltageisolation=2.5kVRMS(t=60s; f=60Hz) ?Sinktoleadcreepagedistance=4.8mm ?P-channel ?DynamicdV/dtrating ?Lowthermalresistance ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESC

VishayVishay Siliconix

威世科技威世科技半導體

詳細參數(shù)

  • 型號:

    IRF9610L

  • 功能描述:

    MOSFET P-CH 200V 1.8A TO-262

  • RoHS:

  • 類別:

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列:

    -

  • 標準包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點:

    邏輯電平門

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
VISHAY
1503+
TO-262
3000
就找我吧!--邀您體驗愉快問購元件!
詢價
VISHAY/威世
23+
TO-262
10000
公司只做原裝正品
詢價
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價
Vishay Siliconix
21+
TO2623 Long Leads I2Pak TO262A
13880
公司只售原裝,支持實單
詢價
VISHAY/威世
23+
TO-262
43000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
Vishay Siliconix
23+
TO2623 Long Leads I2Pak TO262A
9000
原裝正品,支持實單
詢價
Vishay Siliconix
2022+
TO-262-3,長引線,I2Pak,TO-26
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IR
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
VISHAY
15+
TO-220AB
6000
原裝正品現(xiàn)貨庫存價優(yōu)
詢價
IR
24+
TO-220
6848
詢價
更多IRF9610L供應(yīng)商 更新時間2021-9-14 10:50:00