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MAX3006EBP-T

1.2Vto5.5V,±15kVESD-Protected,0.1μA,35Mbps,8-ChannelLevelTranslators

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX3006EUP

1.2Vto5.5V,?15kVESD-Protected,0.1UA,35Mbps,8-ChannelLevelTranslators

GeneralDescription TheMAX3000E/MAX3001E/MAX3002–MAX30128-channelleveltranslatorsprovidethelevelshiftingnecessarytoallowdatatransferinamultivoltagesystem.Externallyappliedvoltages,VCCandVL,setthelogiclevelsoneithersideofthedevice.LogicsignalspresentontheVLs

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MAX3006EUP

1.2Vto5.5V,±15kVESD-Protected,0.1μA,35Mbps,8-ChannelLevelTranslators

MaximMaxim Integrated Products

美信美信半導(dǎo)體

MGP3006

GHzPLLwithI2CBusandFourChipAddresses

CombinedwithaVCO(tuner),theMGP3006X6device,withfourhard-switchedchipaddresses,formsadigitallyprogrammablephase-lockedloopforuseintelevisionsetswithPLL-frequencysynthesistuning.ThePLLpermitsprecisecrystal-controlledsettingofthefrequencyofthetuneroscillatorb

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

MGP3006

GHzPLLwithI2CBusandFourChipAddresses

CombinedwithaVCO(tuner),theMGP3006Xdevice,withfourhard-switchedchipaddresses,formsadigitallyprogrammablephase-lockedloopforuseintelevisionsetswithPLL-frequencysynthesistuning.ThePLLpermitsprecisecrystal-controlledsettingofthefrequencyofthetuneroscillatorbe

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

MGP3006X

GHzPLLwithI2CBusandFourChipAddresses

CombinedwithaVCO(tuner),theMGP3006Xdevice,withfourhard-switchedchipaddresses,formsadigitallyprogrammablephase-lockedloopforuseintelevisionsetswithPLL-frequencysynthesistuning.ThePLLpermitsprecisecrystal-controlledsettingofthefrequencyofthetuneroscillatorbe

SIEMENSSiemens Semiconductor Group

西門子德國(guó)西門子股份公司

MM3006

CMOSSwitchingRegulator(PWMcontrolled)

Outline ThisICisaPWMcontrolledswitchingregulatordevelopedusingtheCMOSprocess.Lowrippleandhighefficiencyof83typ.(MM3005E)areachievedthroughPWMcontrol.Further,outputvoltageishighprecisionoutput±2.4. Features 1.Ultralowconsumptioncurrent17.2μAtyp.(duringop

MITSUMIMitsumi Electronics, Corp.

三美三美電機(jī)株式會(huì)社

MM3006

SmallSignalTransistors

SmallSignalTransistors TO-39Case(Continued)

CentralCentral Semiconductor Corp

美國(guó)中央半導(dǎo)體

MN3006

128-STAGEECONOMYTYPEBBD

GeneralDescription TheMN3006isa128-stageBBDwithwidedynamicrangeandlowdistortionmanufacturedbyusingP-channellownoisesilicongateprocess. TheMN3006isdesignedtoobtainvariablerangeofdelaytimefrom0.32to6.4mssuitablyappliedfortolemoroandvibratoeffectsindelec

PanasonicPanasonic Semiconductor

松下松下電器

MN3006

High-accuracy8-BitD/AConverters

HighAccuracy8-BitD/AConverters

ICST

Integrated Circuit Systems

詳細(xì)參數(shù)

  • 型號(hào)：

    IRFB3006

  • 功能描述：

    MOSFET MOSFT 60V 270A 2.5mOhm 200nCAB

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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