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IRFR024

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR024

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRFR024,SiHFR024) ?Straightlead(IRFU024,SiHFU024) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR024

N-ChannelEnhancementModeMOSFET

Description TheIRFR024NTusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasa BatteryprotectionorinotherSwitchingapplication. GeneralFeatures VDS=60VID=30A RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR024A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR024N

PowerMOSFET(Vdss=55V,Rds(on)=0.075ohm,Id=17A??

IRF

International Rectifier

IRFR024N

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR024N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR024N

MOSFET

Description TheD-PAKisdesignedforsurfacemounting usingvaporphase,infrared,orwavesoldering technigues.Powerdissipationlevelsupto1.5 wattsarepossibleintypicalsurfacemountapplications. Features VDS(V)=55V ID=17A(VGS=10V) RDS(ON)=75mW(VGS=10V)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

IRFR024NPBF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFR024NPBF

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFE024SCV

  • 制造商：

    International Rectifier

  • 功能描述：

    TRANS MOSFET N-CH 60V 6.7A 18PIN LCC - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
22+
18-pin LCC
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
18-pin LCC
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
18-pin LCC
7000
詢價
INTERNATIONA
05+
原廠原裝
4241
只做全新原裝真實現(xiàn)貨供應(yīng)
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
24+
SMD
50
“芯達(dá)集團”專營軍工百分之百原裝進口
 詢價
IR
24+
LCC
200
進口原裝正品優(yōu)勢供應(yīng)
 詢價
IR
專業(yè)軍工
NA
1000
只做原裝正品軍工級部分訂貨
 詢價
IR
三年內(nèi)
1983
只做原裝正品
 詢價
IR
24+
LCC
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！
 詢價
更多IRFE024SCV供應(yīng)商 更新時間2025-3-14 14:00:00

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