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首頁 >IRFE9210>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRFE9210	文件：134.97 Kbytes Page：7 Pages	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) REPETITIVEAVALANCHEANDdv/dtRATEDHEXFET?TRANSISTORSSURFACEMOUNT(LCC-18) Theleadlesschipcarrier(LCC)packagerepresentsthelogicalnextstepinthecontinualevolutionofsurfacemounttechnology.DesingedtobeaclosereplacementfortheTO-39package,theLCCwillgivedesignersth	IRF International Rectifier	IRF
IRFE9210	文件：138.25 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFE9210_15	文件：138.25 Kbytes Page：7 Pages	Simple Drive Requirements	IRF International Rectifier	IRF
IRFF9210	文件：130.59 Kbytes Page：7 Pages	HEXFETTRANSISTORSTHRU-HOLE(TO-205AF) ProductSummary TheHEXFET?technologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometryanduniqueprocessingofthislatest“StateoftheArt”designachieves:verylowon-stateresistancecombinedwithhightransconductance. TheHEXFETtr	IRF International Rectifier	IRF
IRFF9210	文件：16.67 Kbytes Page：1 Pages	P-ChannelMOSFETinaHermeticallysealedTO39	SEME-LAB Seme LAB	SEME-LAB
IRFF9210	文件：134.06 Kbytes Page：7 Pages	SimpleDriveRequirements	IRF International Rectifier	IRF
IRFR9210	文件：172.29 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A) DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-	IRF International Rectifier	IRF
IRFR9210	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210	文件：888.74 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210	文件：345.28 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=-1.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRFR9210PBF	文件：1.78818 Mbytes Page：10 Pages	HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.9A)	IRF International Rectifier	IRF
IRFR9210PBF	文件：1.5825 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9210PBF	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.45842 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.46201 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9210PBF	文件：4.09862 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFE9210
制造商：
International Rectifier
功能描述：
TRANS MOSFET P-CH 200V 1.3A 18PIN LCC - Bulk

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	IRFE9210	IRF	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市航宇科工半導(dǎo)體有限公司	IRFE9210	CHINA	22+	LCC-18	640	航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFE9210	IR	22+	18-pin LCC	6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFE9210	IR	23+	18-pin LCC	8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	IRFE9210	IR	23+	18-pin LCC	7000		詢價(jià)
深圳誠(chéng)思涵科技有限公司	IRFE9230	IR	18+	18-pin+LCC	85600	保證進(jìn)口原裝可開17%增值稅發(fā)票	詢價(jià)
深圳市力拓輝電子有限公司	IRFE9230		22+		5000		詢價(jià)
深圳市晨豪科技有限公司	IRFE9230	INFINEON/英飛凌	23+	LCC	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市寶隆宏業(yè)科技有限公司	IRFE9230	INFINEON/英飛凌	24+	LCC	12320	原裝正品力挺實(shí)單	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	IRFEA240	IR	23+	28-pinLCC	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)

更多IRFE9210供應(yīng)商更新時(shí)間2025-1-3 9:01:00

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