零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IEEE802.3afCompatible IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel100-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
AvalancheRuggedTechnology IEEE802.3afCompatible FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=100V ?LowerRDS(ON):0.155Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | Intersil Intersil Corporation | Intersil | ||
HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR120) ?Str | IRF International Rectifier | IRF | ||
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR120,SiHFR120) ?Straightlead(IRFU120,SiHFU120) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
N-channelEnhancementModePowerMOSFET Features ?VDS=100V,ID=18.1A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AvalancheRuggedTechnology | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRF International Rectifier | IRF | ||
N-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | UMW |
詳細(xì)參數(shù)
- 型號(hào):
IRFF120R
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
H |
23+ |
CAN |
66800 |
原廠授權(quán)一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力! |
詢價(jià) | ||
HARRIS |
16+ |
CAN3 |
5500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
HARRIS |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營(yíng)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
H |
23+ |
CAN |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
H |
21+ |
CAN |
645 |
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方! |
詢價(jià) | ||
H |
CAN |
217 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | |||
H |
QQ咨詢 |
CAN |
182 |
全新原裝 研究所指定供貨商 |
詢價(jià) | ||
H |
23+ |
CAN |
10000 |
原裝正品現(xiàn)貨 |
詢價(jià) | ||
HAR |
24+ |
CAN3 |
2511 |
詢價(jià) | |||
GESS |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) |
相關(guān)規(guī)格書(shū)
更多- IRFF121
- IRFF121R
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- IRFF9131
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- IRFF9211
- IRFF9213
- IRFF9221
- IRFF9230
- IRFF9232
- IRFG110
- IRFG5110SCV
- IRFG5210
- IRFG5210SCX
- IRFG6113
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- IRFH 7934TR2PBF
- IRFH250
- IRFH350-2
相關(guān)庫(kù)存
更多- IRFF1210
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- IRFF9030
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- IRFF9130_11
- IRFF9132
- IRFF9210
- IRFF9212
- IRFF9220
- IRFF9222
- IRFF9231
- IRFF9233
- IRFG5110
- IRFG5110SCX
- IRFG5210SCV
- IRFG6110
- IRFG9110
- IRFH 3702TR2PBF
- IRFH 7914TR2PBF
- IRFH150
- IRFH350
- IRFH3702PBF