零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
N??HANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNELPOWERMOSFETS
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AvalancheRuggedTechnology | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel100V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirementsEaseofParallelingHermeticallySealed HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically | IRF International Rectifier | IRF | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.18ohm,Id=14.4A) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically | IRF International Rectifier | IRF | ||
POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically | IRF International Rectifier | IRF | ||
N-ChannelMOSFETinaHermeticallysealed | SEME-LAB Seme LAB | SEME-LAB |
詳細(xì)參數(shù)
- 型號:
IRFF130R
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-205AF
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HARRIS |
16+ |
CAN3 |
6320 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
HARRIS |
23+ |
TO-39 |
8890 |
價(jià)格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢 |
詢價(jià) | ||
HARRIS |
專業(yè)鐵帽 |
CAN3 |
6320 |
原裝鐵帽專營,代理渠道量大可訂貨 |
詢價(jià) | ||
HARRIS |
專業(yè)鐵帽 |
CAN3 |
67500 |
鐵帽原裝主營-可開原型號增稅票 |
詢價(jià) | ||
HARRIS |
TO-39 |
68500 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
HARRIS/哈里斯 |
2402+ |
TO-39 |
8324 |
原裝正品!實(shí)單價(jià)優(yōu)! |
詢價(jià) | ||
HARRIS |
24+ |
TO-39 |
85 |
詢價(jià) | |||
GESS |
23+ |
NA |
39960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
HARRIS |
97+ |
TO-39 |
85 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
HARRIS |
24+ |
CAN3 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價(jià) |
相關(guān)規(guī)格書
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