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IRFN130SMD

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

SEME-LAB

Seme LAB

IRFN130SMD05

N??HANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFN130SMD05

N??HANNEL POWER MOSFET FOR HI??EL APPLICATIONS

SEME-LAB

Seme LAB

IRFNJ130N

N??HANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP130

N-CHANNELPOWERMOSFETS

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFR130A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR130ATM

AvalancheRuggedTechnology

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFR130ATM

N-Channel100V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

IRFRU130A

AdvancedPowerMOSFET

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS130

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU130A

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=100V ■LowerRDS(ON):0.092Ω(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU130A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFY130

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY130

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130

SimpleDriveRequirements

IRF

International Rectifier

IRFY130C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130C

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY130CM

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.18ohm,Id=14.4A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號:

    IRFN130SMD

  • 功能描述:

    N-Channel

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
詢價
24+
長期備有現(xiàn)貨
500000
行業(yè)低價,代理渠道
詢價
CHINA
22+
SMD-1
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
詢價
IR
22+
SMD-1
6000
終端可免費供樣,支持BOM配單
詢價
INFINEON
23+
C-CCN-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
詢價
IR
23+
SMD-1
8000
只做原裝現(xiàn)貨
詢價
IR
23+
SMD-1
7000
詢價
IR
三年內(nèi)
1983
只做原裝正品
詢價
IR
23+
SMD
66800
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源!
詢價
IR
22+
NA
30000
原裝現(xiàn)貨假一罰十
詢價
更多IRFN130SMD供應(yīng)商 更新時間2024-12-24 13:35:00