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IRFN9240

POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A)

RDS(on)0.51? ID-11A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRF

International Rectifier

IRFN9240

P??HANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFN9240

Simple Drive Requirements

IRF

International Rectifier

IRFN9240_15

Simple Drive Requirements

IRF

International Rectifier

IRFN9240SMD

P-CHANNEL POWER MOSFET

SEME-LAB

Seme LAB

IRFP9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9240

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP9240

12A,200V,0.500Ohm,P-ChannelPowerMOSFET

ThisP-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchasswitching

Intersil

Intersil Corporation

IRFP9240

PowerMOSFET(Vdss=-200V,Rds(on)=0.50ohm,Id=-12A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP9240

P-CHANNELPOWERMOSFETS

FEATURES ?LowRDS(on) ?ImprovedInductiveruggedness ?Fastswitchingtimes ?Ruggedpolysllicongatecellstructure ?LowInputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP9240

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9240

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-12A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9240

P-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=-12A@TC=25℃ ·DrainSourceVoltage-VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=-10V DESCRIPTION ·DC-DCConverters ·MotorDrive ·PowerSwitch

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP9240PBF

HEXFET?PowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredforcommercial-industrialapplicationswherehigherpowerlevels

IRF

International Rectifier

IRFP9240PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9240PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP9240R

Avalanche-Energy-RatedP-ChannelPowerMOSFETs

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFY9240

POWERMOSFETP-CHANNEL(BVdss=-200V,Rds(on)=0.51ohm,Id=-9.4A)

PartNumberRds(on)IdEyelets IRFY9240C0.51?-9.4ACeramic IRFY9240CM0.51?-9.4ACeramic HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-statere

IRF

International Rectifier

IRFY9240

P-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

詳細(xì)參數(shù)

  • 型號：

    IRFN9240

  • 制造商：

    International Rectifier

  • 功能描述：

    Trans MOSFET P-CH 200V 11A 3-Pin SMD-1

  • 功能描述：

    TRANS MOSFET P-CH 200V 11A 3SMD-1 - Bulk

  • 功能描述：

    Single P-Channel 200 V 125 W 60 nC Hexfet Power Mosfet Surface Mount - SMD-1

供應(yīng)商型號品牌批號封裝庫存備注價格
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價
IR
24+
SMD
44
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口
 詢價
IR
18+
SMD
85600
保證進(jìn)口原裝可開17%增值稅發(fā)票
 詢價
IR
專業(yè)軍工
NA
1000
只做原裝正品軍工級部分訂貨
 詢價
IR
專業(yè)軍工
NA
1000
只做原裝正品
 詢價
IR
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
CHINA
22+
SMD-1
640
航宇科工半導(dǎo)體-央企合格優(yōu)秀供方!
 詢價
IR
1341+
SMD
14
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IR
22+
N/A
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價
INFINEON
23+
C-CCN-3
14253
原包裝原標(biāo)現(xiàn)貨,假一罰十,
 詢價
更多IRFN9240供應(yīng)商 更新時間2024-12-24 13:35:00

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