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IRFI4019HG-117P中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書

IRFI4019HG-117P
廠商型號(hào)

IRFI4019HG-117P

功能描述

Integrated Half-Bridge Package

文件大小

273.8 Kbytes

頁(yè)面數(shù)量

7 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-18 20:00:00

IRFI4019HG-117P規(guī)格書詳情

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge onfiguration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Features

? Integrated Half-Bridge Package

? Reduces the Part Count by Half

? Facilitates Better PCB Layout

? Key Parameters Optimized for Class-D

Audio Amplifier Applications

? Low RDS(ON) for Improved Efficiency

? Low Qg and Qsw for Better THD and

Improved Efficiency

? Low Qrr for Better THD and Lower EMI

? Can Delivery up to 200W per Channel into

8? Load in Half-Bridge Configuration

Amplifier

? Lead-Free Package

? Halogen-Free

產(chǎn)品屬性

  • 型號(hào):

    IRFI4019HG-117P

  • 功能描述:

    MOSFET MOSFT DUAL NCh 150V 8.7A 5-Pin

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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