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IRFI540G

HEXFETPOWERMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI540G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540G

iscN-ChannelMOSFETTransistor

?DESCRITION ?SwitchingVoltageRegulators ?FEATURES ?Lowdrain-sourceon-resistance:RDS(ON)=0.077?(MAX) ?Enhancementmode:Vth=2to4V(VDS=10V,ID=0.25mA) ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFI540G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540G

SinktoLeadCreepageDistance=4.8mm

DESCRIPTION TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplications.Themoldingcompoundusedprovidesahighisolationcapabilityandalowthermalresistancebetweenthetabandexternalheatsink.Thisisolationisequivalenttousinga1

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI540G

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540GPBF

HEXFETPowerMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220Fullpakeliminatestheneedforadditionalinsulatinghardwareincommercial-industri

IRF

International Rectifier

IRFI540GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540GPBF

N-Channel100-V(D-S)MOSFET

FEATURES ?TrenchFET?PowerMOSFET ?175°CJunctionTemperature ?LowThermalResistancePackage ?100RgTested APPLICATIONS ?IsolatedDC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRFI540GPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI540N

PowerMOSFET(Vdss=100V,Rds(on)=0.052ohm,Id=20A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRF

International Rectifier

IRFI540NPBF

HEXFETPowerMOSFET

IRF

International Rectifier

IRFI540NPBF

AdvancedProcessTechnology

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRFI540NPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRFM540

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFNJ540

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFR540Z

HEXFET?PowerMOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatest processingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeatures ofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeeda

IRF

International Rectifier

IRFR540Z

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFR540Z

AdvancedProcessTechnology

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR540Z

N-Ch100VFastSwitchingMOSFETs

Features ?AdvancedTrenchMOSTechnology ?100EASGuaranteed ?ReliableandRugged ?GreenDeviceAvailable Applications ?SynchronousRectificationinSMPS ?HardSwitchingandHighSpeedCircuit ?DC/DCinTelecomsandInductrial

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊歐翊歐半導(dǎo)體

詳細參數(shù)

  • 型號：

    IRFI540ATU

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-220F
10000
公司只做原裝正品
 詢價
IR
TO-220F
22+
6000
十年配單,只做原裝
 詢價
IR
23+
TO-TO-220F
12300
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
IR
23+
TO-220F
6000
原裝正品，支持實單
 詢價
IR
22+
TO-220F
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
IR
23+
TO-220F
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-220F
7000
詢價
IR
24+
TO-TO-220F
12300
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
 詢價
IR
05+
TO-220
5000
全新原裝 絕對有貨
 詢價
IR
17+
TO-220F
6200
詢價
更多IRFI540ATU供應(yīng)商 更新時間2025-1-11 14:30:00

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