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IRFI630

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI630

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

IRFI630B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFI630B

200V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRFI630G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630G

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)

200VN-ChannelMOSFET

IRF

International Rectifier

IRFI630GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFI630GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFS630

N-CHANNELMOSFETinaTO-220FPlasticPackage

FOSHANFoshan Blue Rocket Electronics Co.,Ltd.

藍(lán)箭電子佛山市藍(lán)箭電子股份有限公司

IRFS630

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFS630A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:10?(Max.)@VDS=200V LowRDS(ON):0.333(Typ.)

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFS630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS630A

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFS630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFW630B

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Features ?9.0A,200V,RDS(on)=0.4?@VGS=10V ?Lowgatecharge(typical22nC) ?LowCrss(typical22pF) ?Fastswitching ?100av

KERSEMI

Kersemi Electronic Co., Ltd.

IRL630

PowerMOSFET(Vdss=200V,RdS(on)=0.40ohm,Id=9.0A)

VDSS=200V RDS(on)=0.40? ID=9.0A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcomme

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號(hào):

    IRFI630

  • 制造商:

    FAIRCHILD

  • 制造商全稱:

    Fairchild Semiconductor

  • 功能描述:

    200V N-Channel MOSFET

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
05+
TO220
4880
自己公司全新庫(kù)存絕對(duì)有貨
詢價(jià)
FAIRCHILD
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
F
23+
D2-PAK
10000
公司只做原裝正品
詢價(jià)
KERSEMI
21+
TO-220F
10000
原裝現(xiàn)貨假一罰十
詢價(jià)
IR
22+
TO-220
6000
十年配單,只做原裝
詢價(jià)
KERSEMI
TO-220F
68900
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨!
詢價(jià)
75700
23+
10
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種
詢價(jià)
F
23+
D2-PAK
6000
原裝正品,支持實(shí)單
詢價(jià)
F
22+
D2-PAK
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
KERSEMI
23+
TO-220F
8000
只做原裝現(xiàn)貨
詢價(jià)
更多IRFI630供應(yīng)商 更新時(shí)間2025-1-11 10:32:00