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IRFP253

N-Channel Power Mosfets

SamsungSamsung semiconductor

三星三星半導(dǎo)體

IRFP253

N-Channel(Hexfet Transistors)

IRF

International Rectifier

IRFP253

High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert

IXYS

IXYS Corporation

IRFP253

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS253

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFS253

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=17.3A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC253

iscSiliconNPNPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISCN253P

iscSiliconPNPPowerTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISO253

Precision,Powered,Three-PortIsolatedBUFFERAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

ISO253P

Precision,Powered,Three-PortIsolatedBUFFERAMPLIFIER

BURR-BROWN

Burr-Brown (TI)

詳細參數(shù)

  • 型號：

    IRFP253

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    N-Channel Power Mosfets

供應(yīng)商型號品牌批號封裝庫存備注價格
24+
1100
詢價
IR
15+
TO-247
11560
全新原裝,現(xiàn)貨庫存,長期供應(yīng)
 詢價
IR
23+
TO-247
3000
全新原裝
 詢價
IR
23+
TO-3P
5000
原裝正品,假一罰十
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
65480
詢價
IR
22+
TO-247
6000
終端可免費供樣,支持BOM配單
 詢價
IR
22+
TO-3P
12000
只做原裝、原廠優(yōu)勢渠道、假一賠十
 詢價
IR
23+
TO-247
8000
只做原裝現(xiàn)貨
 詢價
IR
24+
TO-3P
990000
明嘉萊只做原裝正品現(xiàn)貨
 詢價
更多IRFP253供應(yīng)商 更新時間2025-3-3 16:00:00

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