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IRFP260N

Power MOSFET(Vdss=200V, Rds(on)=0.04ohm, Id=50A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260N

N-Channel MOSFET Transistor

?DESCRITION ?Fastswitching ?FullyAvalancheRated ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤40m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP260NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP260NPBF

Isc N-Channel MOSFET Transistor

?FEATURES ?WithTO-247packaging ?Easeofparalleling ?Highspeedswitching ?Hardswitchedandhighfrequencycircuits ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation ?APPLICATIONS ?Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP260NPBF

Advanced Process Technology

IRF

International Rectifier

IRFP260NPBF_15

Advanced Process Technology

IRF

International Rectifier

IRFP260PBF

HEXFET?PowerMOSFET

Description ThirdGenerationHEXFETsInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247packageispreferredfor commercial-industrialapplicationswherehigherpowerlevelspre

IRF

International Rectifier

IRFP260PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP260PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFV260

TRANSISTORN-CHANNEL(Vdss=200V,Rds(on)=0.060ohm,Id=45A*)

200Volt,0.060?,HEXFET HEXFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. HEXFETtransistorsalsofeatureallofthewell-establishedadvan

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFP260N

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N TO-247

供應商型號品牌批號封裝庫存備注價格
IR
新
進口原裝
3000
庫存現(xiàn)貨
 詢價
IR
22+
TO247
997500
只做原裝進口現(xiàn)貨
 詢價
IR
2024+
TO-247-3
32560
原裝優(yōu)勢絕對有貨
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
23+
TO247
997500
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
23+
TO-247
35890
詢價
IR
05+
T0-247
1000
全新原裝 絕對有貨
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
24+
原廠封裝
2822
原裝現(xiàn)貨假一罰十
 詢價
更多IRFP260N供應商 更新時間2025-2-1 9:50:00

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