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KF1N60D

N-Channel650V(D-S)MOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF1N60D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60DSLASHI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60I

DPAK(1)PACKAGE

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=1A ?RDS(ON)=10?(Max)@VGS=1

KECKEC CORPORATION

KEC株式會(huì)社

KF1N60L

ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=0.5A ?RDS(ON)=10?(Max)@VGS=

KECKEC CORPORATION

KEC株式會(huì)社

KI1N60

N-ChannelPowerMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

KI1N60DS

N-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實(shí)業(yè)有限公司

詳細(xì)參數(shù)

  • 型號(hào):

    IRFR1N60APBF

  • 功能描述:

    MOSFET N-Chan 600V 1.4 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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Vishay Siliconix
24+
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30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
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VISHAY(威世)
23+
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7845
支持大陸交貨,美金交易。原裝現(xiàn)貨庫(kù)存。
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2306+
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2320
優(yōu)勢(shì)代理渠道,原裝現(xiàn)貨,可全系列訂貨
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IR
13+
TO-252
3578
原裝分銷
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IR/vish
2016+
TO-252
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
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VISHAY
23+
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全新原裝優(yōu)勢(shì)
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2020+
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3225
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
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IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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VISHAY
23+
TO-252
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!
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vishay
23+
NA
2460
專做原裝正品,假一罰百!
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更多IRFR1N60APBF供應(yīng)商 更新時(shí)間2025-3-29 14:14:00