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IRFR210BTF

N-channel Enhancement Mode Power MOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFR210BTM

N-channelEnhancementModePowerMOSFET

Features ?VDS=200V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

IRFR210PBF

HEXFETPOWERMOSFET

IRF

International Rectifier

IRFR210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210PBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TR

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR210TRL

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFR210TRLA

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFR210BTF

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
FAIRCHILD/仙童
24+
TO-252
2382
只做原廠渠道 可追溯貨源
 詢價(jià)
IR
23+
TO252
12335
詢價(jià)
FAIRCHILD/FSC/仙童飛兆半
24+
TO-252
6250
新進(jìn)庫存/原裝
 詢價(jià)
FAIRCHILD
05+
原廠原裝
5888
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
 詢價(jià)
harris
16+
原廠封裝
10000
全新原裝正品,代理優(yōu)勢渠道供應(yīng),歡迎來電咨詢
 詢價(jià)
FSC
22+23+
TO-252
27844
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價(jià)
FAIRCHILD
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
 詢價(jià)
FAIRCHILD/仙童
0129+
TO252
29955
進(jìn)口原盤現(xiàn)貨/2K
 詢價(jià)
IR
6000
面議
19
TO252
 詢價(jià)
FAIRCHILD/仙童
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
 詢價(jià)
更多IRFR210BTF供應(yīng)商 更新時間2025-1-22 16:36:00

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