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IRFR9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET?PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFR9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014PBF	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TR	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRL	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFR9014TRL	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRLA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRLPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRPBF	文件：1.02813 Mbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFR9014TRPBF	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
IRFR9014TRPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRR	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFU9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF

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詳細(xì)參數(shù)

型號(hào)：
IRFR9014N
功能描述：
MOSFET P-CH 60V 5.1A DPAK
RoHS：
否
類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
系列：
-
標(biāo)準(zhǔn)包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點(diǎn)：
邏輯電平門
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時(shí)的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應(yīng)商設(shè)備封裝：
TO-220FP
包裝：
管件

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市華來深電子有限公司	IRFR9014N	IR	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
中天科工半導(dǎo)體（深圳）有限公司	IRFR9014N	IR	20+	DPAK	36900	原裝優(yōu)勢主營型號(hào)-可開原型號(hào)增稅票	詢價(jià)
深圳市維爾達(dá)電子有限公司	IRFR9014N	IR	2023+	SOT-252	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢十年芯程一路只做原裝正品	詢價(jià)
深圳市安富世紀(jì)電子有限公司	IRFR9014N	IR	23+	DPAK	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市科雨電子有限公司	IRFR9014N	INFINEON	1503+	TO-252	3000	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市國宇半導(dǎo)體科技有限公司	IRFR9014N	IR	23+	DPAK	10000	公司只做原裝正品	詢價(jià)
深圳市易訊博科技有限公司	IRFR9014N	Infineon	22+	NA	2118	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)
京海半導(dǎo)體(深圳)有限公司	IRFR9014N	IR	21+	DPAK	10000	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFR9014N	Infineon Technologies	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IRFR9014N	Infineon Technologies	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實(shí)單	詢價(jià)

更多IRFR9014N供應(yīng)商更新時(shí)間2024-11-15 14:36:00

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