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IRFR9014TRLA	文件：4.53358 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRLPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRLPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRPBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRPBF	文件：1.02813 Mbytes Page：8 Pages	P-Channel60-V(D-S)MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司	VBSEMI
IRFR9014TRPBF	文件：2.62994 Mbytes Page：5 Pages	P-ChannelEnhancementModeMOSFETl Features *Vos=60V=-13A Rosion100mQ@Ves=10V Rosion110mQ@Vos=-4.5V(TYP)	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC
IRFR9014TRPBFA	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9014TRPBFA	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9014TRR	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9014	文件：188.89 Kbytes Page：6 Pages	HEXFETPowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFU9014	文件：177.68 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A) Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFU9014	文件：306.39 Kbytes Page：5 Pages	P-CHANNELPOWERMOSFETS FEATURES ?LowerRDS(ON) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowerinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability	SamsungSamsung semiconductor 三星三星半導(dǎo)體	Samsung
IRFU9014	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9014	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9014	文件：345.48 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IRFU9014	文件：1.16375 Mbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surfacemount(IRFR9014,SiHFR9014) ?Straightlead(IRFU9014,SiHFU9014) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9014PBF	文件：1.84209 Mbytes Page：10 Pages	HEXFET?PowerMOSFET Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?DynamicdV/dtRating ?RepetitiveAvalancheRated ?SurfaceMount(IRFR9014) ?StraightL	IRF International Rectifier	IRF
IRFU9014PBF	文件：2.01341 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9014PBF	文件：4.53358 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市維爾達(dá)電子有限公司	IRFR9014TRLPBF	VISHAY	2023+	TO-252	80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
瀚佳科技(深圳)有限公司	IRFR9014TRLPBF	IR/VISH	21+		65230		詢價(jià)
深圳市澳億芯電子科技有限公司	IRFR9014TRLPBF	VISHAY	09+PBF	TO-252	2000	優(yōu)勢(shì)	詢價(jià)
艾睿國(guó)際（香港）有限公司	IRFR9014TRLPBF	VISHAY(威世)	2112+	TO-252-3	115000	3000個(gè)/圓盤一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,	詢價(jià)
深圳市科雨電子有限公司	IRFR9014TRLPBF	VISHAY	1809+	TO-252	3675	就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件!	詢價(jià)
深圳市河鋒鑫科技有限公司	IRFR9014TRLPBF	Vishay Siliconix	22+	TO2523 DPak (2 Leads + Tab) SC	9000	原廠渠道,現(xiàn)貨配單	詢價(jià)
深圳市芯福林電子科技有限公司	IRFR9014TRLPBF	Vishay Siliconix	21+	TO2523 DPak (2 Leads + Tab) SC	13880	公司只售原裝,支持實(shí)單	詢價(jià)
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRFR9014TRLPBF	Vishay Siliconix	23+	TO2523 DPak (2 Leads + Tab) SC	9000	原裝正品，支持實(shí)單	詢價(jià)
深圳市鵬順微電子科技有限公司	IRFR9014TRLPBF	Vishay Siliconix	2022+	TO-252-3,DPak(2 引線 + 接片	38550	全新原裝支持表配單中國(guó)著名電子元器件獨(dú)立分銷	詢價(jià)
深圳兆威電子有限公司	IRFR9014TRLPBF	VISHAY	22+	NA	406	原裝正品支持實(shí)單	詢價(jià)

更多IRFR9014TRLA供應(yīng)商更新時(shí)間2024-11-16 13:30:00

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