零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFR9024N | Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) | IRF International Rectifier | IRF | |
IRFR9024N | Ultra Low On-Resistance | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | |
IRFR9024N | isc P-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
IRFR9024N | P-Channel MOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | |
HEXFET POWER MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A ) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ULTRA LOW ON-ORSISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
ULTRA LOW ON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
詳細參數(shù)
- 型號:
IRFR9024N
- 功能描述:
MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
13000 |
絕對原裝現(xiàn)貨,價格低,歡迎詢購! |
詢價 | ||
IR(國際整流器) |
2023+ |
N/A |
4550 |
全新原裝正品 |
詢價 | ||
TECH PUBLIC(臺舟) |
24+ |
TO-252 |
5000 |
誠信服務(wù),絕對原裝原盤。 |
詢價 | ||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
258 |
原裝正品現(xiàn)貨庫存價優(yōu) |
詢價 | ||||
IR |
06+ |
TO-252 |
15000 |
原裝庫存 |
詢價 | ||
IR |
24+ |
TO252 |
74 |
詢價 | |||
IR |
23+ |
SOT252 |
18689 |
詢價 | |||
IR |
23+ |
SOT-252 |
3200 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
IR |
24+ |
原廠封裝 |
1475 |
原裝現(xiàn)貨假一罰十 |
詢價 |
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