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IRFR9220TRLA	文件：4.55832 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRLPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRPBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRPBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRPBFA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRR	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRR	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBF	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9220TRRPBF	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9220TRRPBFA	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220	文件：169 Kbytes Page：6 Pages	PowerMOSFET(Vdss=-200V,Rds(on)=1.5ohm,Id=-3.6A) DESCRIPTION TheHEXFEtechnologyisthekeytoInternationalRectifiersadvancedlineofpowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. FEATURES ?	IRF International Rectifier	IRF
IRFU9220	文件：99.42 Kbytes Page：8 Pages	3.6A,200V,1.500Ohm,P-ChannelPowerMOSFETs TheseareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecificlevelofenergyintheavalanchebreakdownmodeofoperation.TheseareP-Channelenhancement-modesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switching	Intersil Intersil Corporation	Intersil
IRFU9220	文件：2.04248 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFU9220	文件：4.5583 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.43521 Mbytes Page：7 Pages	DynamicdV/dtRating DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：4.55832 Mbytes Page：7 Pages	PowerMOSFET DESCRIPTION ThirdPowerMOSFETstechnologyisthekeytoVishayadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETsdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAKis	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFU9220	文件：785.7 Kbytes Page：13 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9220,SiHFR9220) ?Straightlead(IRFUFU9220,SiHFU9220) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市卓越微芯電子有限公司	IRFR9220TRLPBF	VISHAY	2020+	TO-252	8960	百分百原裝正品真實(shí)公司現(xiàn)貨庫(kù)存本公司只做原裝可	詢價(jià)
深圳市昌和盛利電子有限公司	IRFR9220TRLPBF	IR	23+	D-PAK	19526		詢價(jià)
深圳市凌旭科技有限公司	IRFR9220TRLPBF	IR	2016+	TO-252	3900	只做原裝,假一罰十,公司可開(kāi)17%增值稅發(fā)票!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	IRFR9220TRLPBF	IR	2018+	TO252	6528	只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心	詢價(jià)
深圳市瑞新盛科技有限公司	IRFR9220TRLPBF	IR		DPAK	20000	原裝現(xiàn)貨	詢價(jià)
深圳市華來(lái)深電子有限公司	IRFR9220TRLPBF	IR	23+	TO-252	11846	一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十	詢價(jià)
深圳誠(chéng)思涵科技有限公司	IRFR9220TRLPBF	VISHAY	18+	D-PAK	85600	保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票	詢價(jià)
深圳市納艾斯科技有限公司	IRFR9220TRLPBF	IR	2020+	TO-252	80000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增	詢價(jià)
瀚佳科技(深圳)有限公司	IRFR9220TRLPBF	IR	21+	D-pak	35200	一級(jí)代理/放心采購(gòu)	詢價(jià)
深圳市拓億芯電子有限公司	IRFR9220TRLPBF	IR	23+	TO-252	30000	全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)	詢價(jià)

更多IRFR9220TRLA供應(yīng)商更新時(shí)間2024-11-16 13:58:00

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