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首頁(yè) >IRFR9310>規(guī)格書列表

零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IRFR9310	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310	文件：3.34658 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310	文件：267.35 Kbytes Page：13 Pages	Power MOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9310,SiHFR9310) ?Straightlead(IRFU9310,SiHFU9310) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310	文件：247.16 Kbytes Page：11 Pages	Power MOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310	文件：3.34757 Mbytes Page：7 Pages	Power MOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310	文件：116.78 Kbytes Page：10 Pages	Power MOSFET(Vdss=-400V, Rds(on)=7.0ohm, Id=-1.8A)	IRF International Rectifier	IRF
IRFR9310_V01	文件：267.35 Kbytes Page：13 Pages	Power MOSFET FEATURES ?Advancedprocesstechnology ?Fullyavalancherated ?Surface-mount(IRFR9310,SiHFR9310) ?Straightlead(IRFU9310,SiHFU9310) ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerat	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310PBF	文件：252.41 Kbytes Page：10 Pages	HEXFET POWER MOSFET Description ThirdgenerationPowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesig	IRF International Rectifier	IRF
IRFR9310PBF	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310PBF	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310TR	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310TRA	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310TRL	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310TRL	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310TRLA	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310TRLPBF	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310TRLPBFA	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRFR9310TRPBF	文件：832.21 Kbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatpowerMOSFETsarewellknownfor,providesthedesignerwithanextre	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRFR9310TRPBFA	文件：3.34605 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachievelowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwithanextre	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細(xì)參數(shù)

型號(hào)：
IRFR9310
功能描述：
MOSFET P-Chan 400V 1.8 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市亞泰盈科電子有限公司	IRFR9310	IR/VISHAY		SOT252	30216	提供BOM表配單TEL:0755-83759919QQ:2355705587杜S	詢價(jià)
深圳市坤融電子科技有限公司	IRFR9310	IR	24+		30000	只做原廠渠道可追溯貨源	詢價(jià)
深圳市明嘉萊科技有限公司	IRFR9310	IR	24+	TO252	160848	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市匯萊威科技有限公司	IRFR9310	VISHAY/威世	24+	TO-252	501742	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
柒號(hào)芯城電子商務(wù)(深圳)有限公司	IRFR9310	IR	2024+	N/A	70000	柒號(hào)只做原裝現(xiàn)貨價(jià)秒殺全網(wǎng)	詢價(jià)
深圳市昌和盛利電子有限公司	IRFR9310	IR	23+	TO-252	35890		詢價(jià)
深圳市一線半導(dǎo)體有限公司	IRFR9310	IR	24+	TO-252	408		詢價(jià)
深圳市博浩通科技有限公司	IRFR9310	IR	23+	TO-252	8890	價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢	詢價(jià)
深圳市弘為電子有限公司	IRFR9310	IR	16+	原廠封裝	951	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市勤思達(dá)科技有限公司	IRFR9310	IR	2015+	D-Pak	12500	全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)	詢價(jià)

更多IRFR9310供應(yīng)商更新時(shí)間2024-12-25 9:10:00

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