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IRFRC20PBF中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

IRFRC20PBF
廠商型號

IRFRC20PBF

功能描述

Power MOSFET

文件大小

1.82401 Mbytes

頁面數(shù)量

8

生產(chǎn)廠商 Vishay Siliconix
企業(yè)簡稱

Vishay威世科技

中文名稱

威世科技半導(dǎo)體官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二原廠數(shù)據(jù)手冊到原廠下載

更新時(shí)間

2024-11-16 20:00:00

IRFRC20PBF規(guī)格書詳情

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFUC/SiHFUC series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.

FEATURES

? Dynamic dV/dt Rating

? Repetitive Avalanche Rated

? Surface Mount (IRFRC20, SiHFRC20

? Straight Lead (IRFUC20, SiHFUC20)

? Available in Tape and Reel

? Fast Switching

? Ease of Paralleling

? Lead (Pb)-free Available

產(chǎn)品屬性

  • 型號:

    IRFRC20PBF

  • 功能描述:

    MOSFET N-Chan 600V 2.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價(jià)格
VISHAY/威世
22+
100000
代理渠道/只做原裝/可含稅
詢價(jià)
IR/VISH
21+
65230
詢價(jià)
Vishay Siliconix
22+
TO2523 DPak (2 Leads + Tab) SC
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IR
23+
TO-252
9896
詢價(jià)
VISHAY/威世
23+
NA
30000
房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
詢價(jià)
Vishay Siliconix
24+
D-Pak
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
詢價(jià)
VISHAY/威世
21+
NA
3000
只做原裝,假一罰十
詢價(jià)
VISHAY/威世
21+
TO252
60000
絕對原裝正品現(xiàn)貨,假一罰十
詢價(jià)
IR
24+
TO-252
501013
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
詢價(jià)
Vishay
23+
NA
16211
專做原裝正品,假一罰百!
詢價(jià)