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FMM23N20

2.3A20VN-ChannelEnhancement-ModeMOSFET

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRFB23N20D

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=24A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFB23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFB23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFS23N20DTRLP

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

PowerMOSFET(Vdss=200V,Rds(on)max=0.10ohm,Id=24A)

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20D

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFSL23N20DPBF

HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFSL23N20DPBF

SMPSMOSFET

SMPSMOSFET Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters

IRF

International Rectifier

MS23N20Z

N-Channel20V(D-S)MOSFET

BWTECH

Bruckewell Technology LTD

詳細(xì)參數(shù)

  • 型號(hào):

    IRFS23N20DTRRP

  • 功能描述:

    MOSFET 200V Single NChannel HEXFET Power MOSFET

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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更多IRFS23N20DTRRP供應(yīng)商 更新時(shí)間2025-1-11 9:50:00