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IRFY130

N-CHANNELPOWERMOSFETFORHI.RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY130

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130

SimpleDriveRequirements

IRF

International Rectifier

IRFY130C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130C

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130C

SimpleDriveRequirements

IRF

International Rectifier

IRFY130CM

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.18ohm,Id=14.4A)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130CM

POWERMOSFETTHRU-HOLE(TO-257AA)

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

IRFY130M

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRFY130M

SimpleDriveRequirementsEaseofParallelingHermeticallySealed

HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance. Features: ■SimpleDriveRequirements ■EaseofParalleling ■Hermetically

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFU130ATU

  • 功能描述：

    MOSFET 100V N-Channel A-FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
IPAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FAIRCHILD
24+
TO-251
5000
詢價
FSC/ON
23+
原包裝原封 □□
8698
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
 詢價
SAMSUNG
2023+環(huán)?，F(xiàn)貨
標準封裝
2500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
IR
05+
TO-251
12000
原裝進口
 詢價
IR
23+
TO-251
9500
專業(yè)優(yōu)勢供應
 詢價
IR
22+
TO-251
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-251
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-251
7000
詢價
IR
23+
TO-251
10000
公司只做原裝正品
 詢價
更多IRFU130ATU供應商 更新時間2025-2-2 15:14:00

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