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IRFU13N15D

Power MOSFET(Vdss=150V, Rds(on)max=0.18ohm, Id=14A)

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFU13N15D

SMPS MOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU13N15D

Marking：IPAK；Package：TO-251；isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFU13N15DPBF

HEXFET Power MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

IRF

International Rectifier

IRFU13N15DPBF

SMPS MOSFET

Benefits ●LowGate-to-DrainChargetoReduce SwitchingLosses ●FullyCharacterizedCapacitanceIncluding EffectiveCOSStoSimplifyDesign,(See App.NoteAN1001) ●FullyCharacterizedAvalancheVoltage andCurrent Applications ●HighfrequencyDC-DCconverters ●Lead-Free

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU13N15DPBF

High frequency DC-DC converters

IRF

International Rectifier

IIRFR13N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤180m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR13N15D

SMPSMOSFET

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR13N15D

PowerMOSFET(Vdss=150V,Rds(on)max=0.18ohm,Id=14A)

Benefits ?LowGate-to-DrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent Applications ?HighfrequencyDC-DCconverters

IRF

International Rectifier

IRFR13N15D

N-ChannelMOSFETTransistor

?DESCRITION ?HighfrequencyDC-DCconverters ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤180m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號：

    IRFU13N15D

  • 功能描述：

    MOSFET N-CH 150V 14A I-PAK

  • RoHS：

    否

  • 類別：

    分離式半導體產(chǎn)品 >> FET - 單

  • 系列：

    HEXFET®

  • 標準包裝：

    1,000

  • 系列：

    MESH OVERLAY™ FET

  • 型：

    MOSFET N 通道，金屬氧化物 FET

  • 特點：

    邏輯電平門

  • 漏極至源極電壓(Vdss)：

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C：

    18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°

  • C：

    180 毫歐 @ 9A，10V Id 時的

  • Vgs(th)（最大）：

    4V @ 250µA 閘電荷(Qg) @

  • Vgs：

    72nC @ 10V 輸入電容(Ciss) @

  • Vds：

    1560pF @ 25V 功率 -

  • 最大：

    40W

  • 安裝類型：

    通孔

  • 封裝/外殼：

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝：

    TO-220FP

  • 包裝：

    管件

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
23+
TO-251
35890
詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
IR
23+
TO-251
11846
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十
 詢價
IR
24+
TO-251
16800
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!?
 詢價
FCS
23+
TO-2203L
69820
終端可以免費供樣,支持BOM配單!
 詢價
INFINEON
1503+
TO-251
3000
就找我吧!--邀您體驗愉快問購元件!
 詢價
IR
1923+
TO-251
6896
原裝進口現(xiàn)貨庫存專業(yè)工廠研究所配單供貨
 詢價
Infineon
22+
NA
2118
加我QQ或微信咨詢更多詳細信息,
 詢價
Infineon Technologies
22+
TO2513 Short Leads IPak TO251A
9000
原廠渠道,現(xiàn)貨配單
 詢價
Infineon Technologies
21+
TO2513 Short Leads IPak TO251A
13880
公司只售原裝,支持實單
 詢價
更多IRFU13N15D供應(yīng)商 更新時間2025-3-15 11:07:00

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