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IRFU224

Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)

IRF

International Rectifier

IRFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU224

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU224

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR224,SiHFR224) ?Straightlead(IRFU224,SiHFU224) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU224

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFU224B

250V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRFU224PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFU224PBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU224PBF

Dynamic dv/dt Rating

DESCRIPTION ThirdgenerationPowerMOSFETsformVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderigtechniques.Thestr

KERSEMI

Kersemi Electronic Co., Ltd.

詳細(xì)參數(shù)

  • 型號：

    IRFU224

  • 功能描述：

    MOSFET N-Chan 250V 3.8 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
IR/VISHAY
TO-251
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢價
IR
24+
TO-251
25
只做原廠渠道 可追溯貨源
 詢價
IR
24+
TO 251
160998
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
IR
23+
TO-251
35890
詢價
IR
24+
TO-251
36800
詢價
IR
05+
TO-251
12000
原裝進(jìn)口
 詢價
IR
23+
原廠原裝
5000
全新原裝
 詢價
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費送樣
 詢價
IR
23+
NA
10050
全新原裝假一賠十
 詢價
更多IRFU224供應(yīng)商 更新時間2025-1-31 14:00:00

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