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IRFU420PBF

HEXFETPOWERMOSFET(VDSS=500V,RDS(on)=3.0廓,ID=2.4A)

IRF

International Rectifier

IRFU420PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技威世科技半導體

IRFU420PBF

DynamicdV/dtRating

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

DynamicdV/dtRating

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

IRFU420PBF

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR420,SiHFR420) ?Straightlead(IRFU420,SiHFU420) ?Availableintapeandreel ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技威世科技半導體

IRFY420

N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage.

SEME-LAB

Seme LAB

IRFY420C

N-ChannelMOSFETinaHermeticallysealed

SEME-LAB

Seme LAB

IRGB420

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=7.5A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB420U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=7.5A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFU420BTU

  • 功能描述：

    MOSFET 500V N-Channel B-FET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FSC
2020+
TO-251
9660
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
FAIRCHILD
1816+
TO-251
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
 詢價
FSC
2020+
TO-251
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
 詢價
FAIRCHILD
24+
35200
一級代理/放心采購
 詢價
FAIRCHILD/仙童
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
 詢價
FAIRCHILD
22+
TO-251
8900
英瑞芯只做原裝正品!!!
 詢價
fsc
24+
500000
行業(yè)低價,代理渠道
 詢價
FSC
06+
TO-251
6015
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
FAIRCHILD
2023+環(huán)?，F(xiàn)貨
原廠原裝
4500
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務
 詢價
FAIRCHILD
2023+
SMD
5524
安羅世紀電子只做原裝正品貨
 詢價
更多IRFU420BTU供應商 更新時間2025-3-15 13:58:00

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