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AUIRG4PC40S-E

InsulatedGateBipolarTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

AUIRG4PC40S-E

InsulatedGateBipolarTransistor

IRF

International Rectifier

G4PC40U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.1.72V,@Vge=15V,Ic=20A)

Benefits ?Generation4IGBTsofferhighestefficiencyavailable ?IGBTsoptimizedforspecifiedapplicationconditions ?Designedtobeadrop-inreplacementforequivalent industry-standardGeneration3IRIGBTs Features ?UltraFast:Optimizedforhighoperating frequencies8-40kHz

IRF

International Rectifier

G4PC40W

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.32V,@Vge=15V,Ic=31A)

StandardSpeedIGBT Features ?Standard:Optimizedforminimumsaturationvoltageandlowoperatingfrequencies(

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.05V,@Vge=15V,Ic=20A)

Benefits ?Lowerswitchinglossesallowmorecost-effective operationthanpowerMOSFETsupto150kHz (hardswitchedmode) ?Ofparticularbenefittosingle-endedconvertersand boostPFCtopologies150Wandhigher ?Lowconductionlossesandminimalminority-carrier recombinat

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastSpeedIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Benefits ?Gener

IRF

International Rectifier

IRG4PC40F

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=1.50V,@Vge=15V,Ic=27A)

FastCoPackIGBT Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-sof

IRF

International Rectifier

IRG4PC40FD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

IRF

International Rectifier

IRG4PC40FDPBF

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE

Features ?Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBTco-packagedwithHEXFREDTMultrafast,ultra-soft-recoveryanti-pa

IRF

International Rectifier

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTOR

IRF

International Rectifier

IRG4PC40FPBF

INSULATEDGATEBIPOLARTRANSISTORFastSpeedIGBT

Features ?Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode) ?Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan Generation3 ?IndustrystandardTO-247ACpackage ?Lead-Free Benefit

IRF

International Rectifier

IRG4PC40K

INSULATEDGATEBIPOLARTRANSISTOR(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovideshigherefficiencythanGeneration3 ?IndustrystandardTO-247ACpackage Bene

IRF

International Rectifier

IRG4PC40K

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40KD

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRG4PC40KD

INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE(Vces=600V,Vce(on)typ.=2.1V,@Vge=15V,Ic=25A)

ShortCircuitRatedUltraFastIGBT Features ?ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShortCircuitRatedto10μs@125°C,VGE=15V ?Generation4IGBTdesignprovidestighterparameterdistributionandhigherefficiencythanGeneration3 ?IGBT

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
22+
6000
終端可免費(fèi)供樣,支持BOM配單
 詢價(jià)
IR
23+
8000
只做原裝現(xiàn)貨
 詢價(jià)
IR
23+
7000
詢價(jià)
IR
1215+
TO-247
150000
全新原裝,絕對(duì)正品,公司大量現(xiàn)貨供應(yīng).
 詢價(jià)
IR
2016+
TO-247
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
23+
1000
詢價(jià)
IR
23+
TO-247AC
7750
全新原裝優(yōu)勢(shì)
 詢價(jià)
IR
1651+
TO-247
5600
只做原裝進(jìn)口,假一罰十
 詢價(jià)
IR
2020+
TO-247
350000
100%進(jìn)口原裝正品公司現(xiàn)貨庫存
 詢價(jià)
Infineon
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)QQ3171516190
 詢價(jià)
更多IRG4PC40UD-LF供應(yīng)商 更新時(shí)間2025-1-7 14:00:00

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