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IRL1104

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104L

Logic-Level Gate Drive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104LPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104PBF

Logic-Level Gate Drive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

Advanced Process Technology Logic-Level Gate Drive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104S

Logic-Level Gate Drive

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IRL1104SPBF

HEXFET Power MOSFET

VDSS=40V RDS(on)=0.008? ID=104A? Description FifthGenerationHEXFET?powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandrugged

IRF

International Rectifier

IS1104

SwitchingModePowerSupply

ISOCOM

ISOCOM COMPONENTS

ISF1104

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=40A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=110mΩ(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

ISP1104

AdvancedUniversalSerialBustransceiver

Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

ISP1104W

AdvancedUniversalSerialBustransceiver

Generaldescription TheISP1104UniversalSerialBus(USB)transceiveriscompliantwiththeUniversalSerialBusSpecificationRev.2.0.TheISP1104cantransmitandreceiveUSBdataatfull-speed(12Mbit/s).ItallowssingleanddifferentialinputmodesselectablebyaMODEinput. Features ■

PhilipsNXP Semiconductors

飛利浦荷蘭皇家飛利浦

JFN1104LS-AR

Widerangetemperatureapplicableproduct

Stanley

STANLEY ELECTRIC CO.,LTD.

JGN1104LS-AR

Widerangetemperatureapplicableproduct

Stanley

STANLEY ELECTRIC CO.,LTD.

KAN1104RR

HALF-PITCHLOWPROFILEDIPSWITCHES

E-SWITCH

E-switch

KAN1104RT

HALF-PITCHLOWPROFILEDIPSWITCHES

E-SWITCH

E-switch

KAS1104ET

SLIDEDIPSWITCHES

E-SWITCH

E-switch

KAS1104RT

SLIDEDIPSWITCHES

E-SWITCH

E-switch

KSR1104

NPN(SWITCHINGAPPLICATION)

SWITCHINGAPPLICATION(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=47K?,R2=47K?) ?ComplementtoKSR2104

SamsungSamsung semiconductor

三星三星半導(dǎo)體

KSR1104

SwitchingApplication(BiasResistorBuiltIn)

SwitchingApplication(BiasResistorBuiltIn) ?Switchingcircuit,Inverter,Interfacecircuit,DriverCircuit ?BuiltinbiasResistor(R1=47K?,R2=47K?) ?ComplementtoKSR2104

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

LDP1104

Dualconductorconstruction

LSTD

Laird Tech Smart Technology

詳細(xì)參數(shù)

  • 型號(hào):

    IRL1104

  • 功能描述:

    MOSFET N-CH 40V 104A TO-220AB

  • RoHS:

  • 類(lèi)別:

    分離式半導(dǎo)體產(chǎn)品 >> FET - 單

  • 系列:

    HEXFET®

  • 標(biāo)準(zhǔn)包裝:

    1,000

  • 系列:

    MESH OVERLAY™ FET

  • 型:

    MOSFET N 通道,金屬氧化物 FET

  • 特點(diǎn):

    邏輯電平門(mén)

  • 漏極至源極電壓(Vdss):

    200V 電流 - 連續(xù)漏極(Id) @ 25°

  • C:

    18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25°

  • C:

    180 毫歐 @ 9A,10V Id 時(shí)的

  • Vgs(th)(最大):

    4V @ 250µA 閘電荷(Qg) @

  • Vgs:

    72nC @ 10V 輸入電容(Ciss) @

  • Vds:

    1560pF @ 25V 功率 -

  • 最大:

    40W

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-220-3 整包

  • 供應(yīng)商設(shè)備封裝:

    TO-220FP

  • 包裝:

    管件

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
24+
TO-220AB
8866
詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫(kù)存長(zhǎng)期供應(yīng)
詢價(jià)
IR
17+
TO-220
6200
詢價(jià)
ir
06+
TO-220
15000
原裝庫(kù)存
詢價(jià)
IR
23+
TO-220AB
8600
全新原裝現(xiàn)貨
詢價(jià)
IR
23+
TO-220
35890
詢價(jià)
IR
16+
TO-220
10000
全新原裝現(xiàn)貨
詢價(jià)
IR
24+
TO220
5000
只做原裝公司現(xiàn)貨
詢價(jià)
IR
2018+
TO220
6528
只做原裝正品假一賠十!只要網(wǎng)上有上百分百有庫(kù)存放心
詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
更多IRL1104供應(yīng)商 更新時(shí)間2024-12-23 16:30:00