首頁(yè) >IRLFL014TR>規(guī)格書列表
零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFET?PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI | ||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
AdvancedProcessTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
55VN-ChannelMOSFET Benefits VDS(V)=55V ID=2.0A(VGS=10V) RDS(ON) | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導(dǎo)體 | EVVOSEMI |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
SOT-223 |
8700 |
新進(jìn)庫(kù)存/原裝 |
詢價(jià) | ||
IR |
24+ |
SOT223 |
2500 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
IR |
22+ |
SOT-223 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SOT-223 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SOT-223 |
7000 |
詢價(jià) | |||
IR |
23+ |
SOT-223 |
4500 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
TDK |
20+ |
射頻元件 |
3000 |
就找我吧!--邀您體驗(yàn)愉快問購(gòu)元件! |
詢價(jià) | ||
IR |
23+ |
QFN |
69000 |
全新原裝現(xiàn)貨熱賣/代理品牌/可申請(qǐng)樣品和規(guī)格書 |
詢價(jià) | ||
英飛凌 |
21+ |
PG-TDSON-8 |
6000 |
絕對(duì)原裝現(xiàn)貨 |
詢價(jià) | ||
INFINE0N |
21+ |
PQFN 5 x 6 B/G |
32568 |
100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng) |
詢價(jià) |
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