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IRLI630G

Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630G

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630G

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630GPBF

HEXFET Power MOSFET

VDSS=200V RDS(on)=0.40? ID=6.2A Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowonresistanceandcost-effectiveness.TheTO-220Fullpakeliminatestheneedforadditionalins

IRF

International Rectifier

IRLI630GPBF

Power MOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.40 Qg(Max.)(nC)40 Qgs(nC)5.5 Qgd(nC)24 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivenes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630G_V01

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLI630GPBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLS630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4Ω ID=6.5A FEATURES ●Logic-LevelGateDrive ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10μA(Max.)@VDS=200V ●LowerRDS(ON):0

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRLS630A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLW630A

AdvancedPowerMOSFET

BVDSS=200V RDS(on)=0.4? ID=9A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?150°COperatingTemperature ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.

IRF

International Rectifier

詳細(xì)參數(shù)

  • 型號：

    IRLI630G

  • 功能描述：

    MOSFET N-Chan 200V 6.2 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IR
24+
TO 220F
161237
明嘉萊只做原裝正品現(xiàn)貨
 詢價(jià)
IR
23+
TO-220F
35890
詢價(jià)
IR
2016+
TO-220F
6528
房間原裝進(jìn)口現(xiàn)貨假一賠十
 詢價(jià)
IR
23+
TO-220F
11186
全新原裝
 詢價(jià)
IR
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應(yīng)
 詢價(jià)
IR
24+
TO-220FullPak(Iso)
8866
詢價(jià)
IR
24+
TO-220F
5000
全現(xiàn)原裝公司現(xiàn)貨
 詢價(jià)
IRF
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
 詢價(jià)
IR
24+
TO-220F
16800
絕對原裝進(jìn)口現(xiàn)貨,假一賠十,價(jià)格優(yōu)勢!?
 詢價(jià)
VISHAY
1503+
TO220-3
3000
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
更多IRLI630G供應(yīng)商 更新時(shí)間2025-1-22 19:10:00

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